2SD1801T-TL-E Overview
In this device, the DC current gain is 100 @ 100mA 2V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 400mV.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 50mA, 1A.The base voltage of the emitter can be kept at 6V to achieve high efficiency.Maximum collector currents can be below 2A volts.
2SD1801T-TL-E Features
the DC current gain for this device is 100 @ 100mA 2V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 50mA, 1A
the emitter base voltage is kept at 6V
2SD1801T-TL-E Applications
There are a lot of ON Semiconductor 2SD1801T-TL-E applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
