BC859BLT3G Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the base current and the collector current.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of -650mV.A VCE saturation (Max) of 650mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.The current rating of this fuse is -100mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In the part, the transition frequency is 100MHz.Maximum collector currents can be below 100mA volts.
BC859BLT3G Features
the DC current gain for this device is 220 @ 2mA 5V
a collector emitter saturation voltage of -650mV
the vce saturation(Max) is 650mV @ 5mA, 100mA
the emitter base voltage is kept at 5V
the current rating of this device is -100mA
a transition frequency of 100MHz
BC859BLT3G Applications
There are a lot of ON Semiconductor BC859BLT3G applications of single BJT transistors.
- Driver
- Interface
- Muting
- Inverter
