AIKW75N60CTE8188XKSA1 Description
The AIKW75N60CTE8188XKSA1 is a Low Loss DuoPack: IGBT in TRENCHSTOP? and Fieldstop technology with a soft, fast recovery antiparallel Emitter Controlled diode. A three-terminal power semiconductor known as an insulated-gate bipolar transistor (IGBT) is primarily employed as an electronic switch and has evolved over time to combine high efficiency and quick switching. It has four P-N-P-N layers that alternate, and its four layers are interconnected by a metal-oxide-semiconductor (MOS) gate structure.
AIKW75N60CTE8188XKSA1 Features
Positive temperature coefficient in VCE(sat)
Low EMI
Low gate charge QG
Green package
Verysoft, fast recovery antiparallel Emitter Controlled HE diode
TRENCHSTOP? and Fieldstop technology for 600V applications offers:
- very tight paramete rdistribution
- high ruggedness, temperatures tablebehavior
- very high switching speed
Automotive AEC-Q101 qualified
Designed for DC/AC converters for Automotive Application
Very lowVCE(sat) 1.5V (typ.)
Maximum junction temperature 175°C
Dynamically stress tested
Short circuit withstand time 5μs
100% short circuit tested
100% of the parts are dynamically tested
AIKW75N60CTE8188XKSA1 Applications
Main inverter
Climate compressor
PTC heater
Motor drives
