Name: IRGP50B60PD1-EP
Brand: Infineon Technologies
SKU: IRGP50B60PD1-EP
Availability: InStock

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IRGP50B60PD1-EP

Manufacturer part number:IRGP50B60PD1-EP

Manufacturer:Infineon Technologies

Description:IRGP50B60PD1-EP datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:IRGP50B60PD1-EP Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Through Hole
Package / Case	TO-3P-3 Full Pack
Surface Mount	NO
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2008
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Additional Feature	HIGH RELIABILITY
Subcategory	Insulated Gate BIP Transistors
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Rise Time-Max	20ns
Configuration	SINGLE WITH BUILT-IN DIODE
Input Type	Standard
Power - Max	390W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Reverse Recovery Time	42ns
JEDEC-95 Code	TO-247AD
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	75A
Power Dissipation-Max (Abs)	390W
Turn On Time	39 ns
Test Condition	390V, 33A, 3.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.85V @ 15V, 50A
Turn Off Time-Nom (toff)	161 ns
IGBT Type	NPT
Gate Charge	205nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	30ns/130ns
Switching Energy	255μJ (on), 375μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Fall Time-Max (tf)	20ns
RoHS Status	RoHS Compliant