IRG4RC10SPBF Description
IRG4RC10SPBF is a 600v insulated gate bipolar transistor. The Infineon IRG4RC10SPBF can be applied in Communications equipment, Wired networking, Enterprise systems, Enterprise projectors, Personal electronics, and Portable electronics applications due to the following features. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor IRG4RC10SPBF is in the TO-252AA package with 38W power dissipation.
IRG4RC10SPBF Features
Extremely low voltage drop; 1.0V typical at 2A, 100°C
Standard: Optimized for minimum saturation voltage and low operating frequencies ( < 1kHz)
Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than the previous generation
Industry-standard TO-252AA package
Generation 4 IGBTs offer the highest efficiency available
IGBTs optimized for specified application conditions
IRG4RC10SPBF Applications
Communications equipment
Wired networking
Enterprise systems
Enterprise projectors
Personal electronics
Portable electronics
