NGTB15N120IHLWG Description
The NGTB15N120IHLWG Insulated Gate Bipolar Transistor (IGBT) has a durable and cost-effective Field Stop (FS) Trench construction and offers exceptional performance in demanding switching applications, with low on-state voltage and reduced switching loss. For resonant or soft switching applications, the IGBT is ideal. A durable co-packaged free wheeling diode with a low forward voltage is included in the device.
NGTB15N120IHLWG Features
Low Gate Charge
These are Pb?Free Devices
Low Saturation Voltage using Trench with Fieldstop Technology
Low Switching Loss Reduces System Power Dissipation
Optimized for Low Case Temperature in IH Cooker Application
NGTB15N120IHLWG Applications
Soft Switching
Inductive Heating
Consumer Appliances
