STGWA15S120DF3 Description
The STGWA15S120DF3 IGBT was created by employing a cutting-edge, exclusive trench gate field-stop structure. The S series of 1200 V IGBTs, which includes the STGWA15S120DF3, is designed to maximize efficiency in low-frequency industrial applications. Additionally, a safer paralleling operation is produced by a positive VCE(sat) temperature coefficient and constrained parameter distribution.
STGWA15S120DF3 Features
Safer paralleling
Low thermal resistance
Tight parameter distribution
10 μs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 15 A
Soft and fast recovery antiparallel diode
STGWA15S120DF3 Applications
UPS
Solar
Welding
Industrial drives
