ZXTP19020DGTA Overview
This device has a DC current gain of 300 @ 100mA 2V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 275mV allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 275mV @ 800mA, 8A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.The part has a transition frequency of 176MHz.Single BJT transistor can take a breakdown input voltage of 20V volts.During maximum operation, collector current can be as low as 8A volts.
ZXTP19020DGTA Features
the DC current gain for this device is 300 @ 100mA 2V
a collector emitter saturation voltage of 275mV
the vce saturation(Max) is 275mV @ 800mA, 8A
the emitter base voltage is kept at 7V
a transition frequency of 176MHz
ZXTP19020DGTA Applications
There are a lot of Diodes Incorporated ZXTP19020DGTA applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
