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ZXT13P20DE6TA

ZXT13P20DE6TA

ZXT13P20DE6TA

Diodes Incorporated

ZXT13P20DE6TA datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZXT13P20DE6TA Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6
Number of Pins 6
Weight 14.996898mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2006
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -20V
Max Power Dissipation1.1W
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-3.5A
Frequency 90MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZXT13P20D
Pin Count6
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1.7W
Power - Max 1.1W
Transistor Application SWITCHING
Gain Bandwidth Product90MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 20V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 1A 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 250mV @ 350mA, 3.5A
Collector Emitter Breakdown Voltage20V
Transition Frequency 90MHz
Collector Emitter Saturation Voltage-165mV
Max Breakdown Voltage 20V
Collector Base Voltage (VCBO) 25V
Emitter Base Voltage (VEBO) 7.5V
Continuous Collector Current -4A
Height 1.3mm
Length 3.1mm
Width 1.8mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:8483 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.72000$0.72
500$0.7128$356.4
1000$0.7056$705.6
1500$0.6984$1047.6
2000$0.6912$1382.4
2500$0.684$1710

ZXT13P20DE6TA Product Details

ZXT13P20DE6TA Overview


DC current gain in this device equals 300 @ 1A 2V, which is the ratio of the base current to the collector current.The collector emitter saturation voltage is -165mV, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 250mV @ 350mA, 3.5A.For high efficiency, the continuous collector voltage must be kept at -4A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 7.5V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-3.5A).As a result, the part has a transition frequency of 90MHz.Input voltage breakdown is available at 20V volts.A maximum collector current of 4A volts can be achieved.

ZXT13P20DE6TA Features


the DC current gain for this device is 300 @ 1A 2V
a collector emitter saturation voltage of -165mV
the vce saturation(Max) is 250mV @ 350mA, 3.5A
the emitter base voltage is kept at 7.5V
the current rating of this device is -3.5A
a transition frequency of 90MHz

ZXT13P20DE6TA Applications


There are a lot of Diodes Incorporated ZXT13P20DE6TA applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

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