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2SC4738-Y,LF

2SC4738-Y,LF

2SC4738-Y,LF

Toshiba Semiconductor and Storage

2SC4738-Y,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

2SC4738-Y,LF Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Contact PlatingSilver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Number of Pins 3
Operating Temperature125°C TJ
PackagingCut Tape (CT)
Published 2004
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation100mW
Power - Max 100mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 250mV
Max Collector Current 150mA
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage50V
Max Breakdown Voltage 50V
Frequency - Transition 80MHz
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
RoHS StatusRoHS Compliant
In-Stock:41712 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$11.173886$11.173886
10$10.541403$105.41403
100$9.944720$994.472
500$9.381810$4690.905
1000$8.850765$8850.765

2SC4738-Y,LF Product Details

2SC4738-Y,LF Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 120 @ 2mA 6V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.Emitter base voltages of 5V can achieve high levels of efficiency.Single BJT transistor can take a breakdown input voltage of 50V volts.A maximum collector current of 150mA volts can be achieved.

2SC4738-Y,LF Features


the DC current gain for this device is 120 @ 2mA 6V
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 5V

2SC4738-Y,LF Applications


There are a lot of Toshiba Semiconductor and Storage 2SC4738-Y,LF applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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