2N3771G Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 15A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 2V, which allows maximum flexibilSingle BJT transistory in design.When VCE saturation is 4V @ 6A, 30A, transistor means Ic has reached transistors maximum value (saturated).The base voltage of the emitter can be kept at 5V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (30A).There is a transition frequency of 0.2MHz in the part.Single BJT transistor is possible for the collector current to fall as low as 30A volts at Single BJT transistors maximum.
2N3771G Features
the DC current gain for this device is 15 @ 15A 4V
a collector emitter saturation voltage of 2V
the vce saturation(Max) is 4V @ 6A, 30A
the emitter base voltage is kept at 5V
the current rating of this device is 30A
a transition frequency of 0.2MHz
2N3771G Applications
There are a lot of ON Semiconductor 2N3771G applications of single BJT transistors.
- Driver
- Muting
- Inverter
- Interface