FJD5304DTF Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 8 @ 2A 5V.A collector emitter saturation voltage of 1.5V ensures maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Keeping the emitter base voltage at 12V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 4A current rating.Single BJT transistor can take a breakdown input voltage of 400V volts.Single BJT transistor is possible for the collector current to fall as low as 4A volts at Single BJT transistors maximum.
FJD5304DTF Features
the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 500mA, 2.5A
the emitter base voltage is kept at 12V
the current rating of this device is 4A
FJD5304DTF Applications
There are a lot of ON Semiconductor FJD5304DTF applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
