FZT857TA Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 500mA 10V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 345mV.When VCE saturation is 345mV @ 600mA, 3.5A, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor is essential to maintain the continuous collector voltage at 3.5A to achieve high efficiency.The base voltage of the emitter can be kept at 6V to achieve high efficiency.This device has a current rating of 3.5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 80MHz.A breakdown input voltage of 300V volts can be used.In extreme cases, the collector current can be as low as 3.5A volts.
FZT857TA Features
the DC current gain for this device is 100 @ 500mA 10V
a collector emitter saturation voltage of 345mV
the vce saturation(Max) is 345mV @ 600mA, 3.5A
the emitter base voltage is kept at 6V
the current rating of this device is 3.5A
a transition frequency of 80MHz
FZT857TA Applications
There are a lot of Diodes Incorporated FZT857TA applications of single BJT transistors.
- Driver
- Muting
- Interface
- Inverter
