DXT2012P5-13 Overview
This device has a DC current gain of 100 @ 2A 1V, which is the ratio between the base current and the collector current.The collector emitter saturation voltage is -250mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 250mV @ 500mA, 5A.Continuous collector voltage should be kept at -5.5A for high efficiency.A high level of efficiency can be achieved if the base voltage of the emitter remains at -7V.The part has a transition frequency of 120MHz.There is a breakdown input voltage of 60V volts that it can take.Collector current can be as low as 5.5A volts at its maximum.
DXT2012P5-13 Features
the DC current gain for this device is 100 @ 2A 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 250mV @ 500mA, 5A
the emitter base voltage is kept at -7V
a transition frequency of 120MHz
DXT2012P5-13 Applications
There are a lot of Diodes Incorporated DXT2012P5-13 applications of single BJT transistors.
- Inverter
- Interface
- Driver
- Muting
