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ZTX1149A

ZTX1149A

ZTX1149A

Diodes Incorporated

ZTX1149A datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

ZTX1149A Datasheet PDF

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Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 15 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case E-Line-3
Number of Pins 3
Weight 453.59237mg
Transistor Element Material SILICON
Operating Temperature-55°C~200°C TJ
PackagingBulk
Published 2012
JESD-609 Code e3
Pbfree Code no
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -25V
Max Power Dissipation1W
Terminal FormWIRE
Peak Reflow Temperature (Cel) 260
Current Rating-3A
Frequency 135MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number ZTX1149A
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation1W
Transistor Application AMPLIFIER
Gain Bandwidth Product135MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 500mA 2V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 70mA, 3A
Collector Emitter Breakdown Voltage25V
Transition Frequency 135MHz
Collector Emitter Saturation Voltage-200mV
Max Breakdown Voltage 25V
Collector Base Voltage (VCBO) 30V
Emitter Base Voltage (VEBO) -5V
Continuous Collector Current -3A
Height 4.01mm
Length 4.77mm
Width 2.41mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
In-Stock:7008 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.972579$2.972579
10$2.804320$28.0432
100$2.645585$264.5585
500$2.495835$1247.9175
1000$2.354561$2354.561

ZTX1149A Product Details

ZTX1149A Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 250 @ 500mA 2V.The collector emitter saturation voltage is -200mV, which allows for maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 300mV @ 70mA, 3A.A -3A continuous collector voltage is necessary to achieve high efficiency.An emitter's base voltage can be kept at -5V to gain high efficiency.The current rating of this fuse is -3A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.In this part, there is a transition frequency of 135MHz.This device can take an input voltage of 25V volts before it breaks down.Single BJT transistor is possible to have a collector current as low as 3A volts at Single BJT transistors maximum.

ZTX1149A Features


the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 300mV @ 70mA, 3A
the emitter base voltage is kept at -5V
the current rating of this device is -3A
a transition frequency of 135MHz

ZTX1149A Applications


There are a lot of Diodes Incorporated ZTX1149A applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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