MMSTA06-7-F Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 1V.This design offers maximum flexibility with a collector emitter saturation voltage of 250mV.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 250mV @ 10mA, 100mA.Continuous collector voltages of 500mA should be maintained to achieve high efficiency.The base voltage of the emitter can be kept at 4V to achieve high efficiency.The current rating of this fuse is 500mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.100MHz is present in the transition frequency.Breakdown input voltage is 80V volts.During maximum operation, collector current can be as low as 500mA volts.
MMSTA06-7-F Features
the DC current gain for this device is 100 @ 100mA 1V
a collector emitter saturation voltage of 250mV
the vce saturation(Max) is 250mV @ 10mA, 100mA
the emitter base voltage is kept at 4V
the current rating of this device is 500mA
a transition frequency of 100MHz
MMSTA06-7-F Applications
There are a lot of Diodes Incorporated MMSTA06-7-F applications of single BJT transistors.
- Interface
- Driver
- Inverter
- Muting