PBSS5320T,215 Overview
In this device, the DC current gain is 200 @ 1A 2V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 300mA, 3A.The emitter base voltage can be kept at 5V for high efficiency.As a result, the part has a transition frequency of 100MHz.Single BJT transistor can be broken down at a voltage of 20V volts.A maximum collector current of 2A volts can be achieved.
PBSS5320T,215 Features
the DC current gain for this device is 200 @ 1A 2V
the vce saturation(Max) is 300mV @ 300mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 100MHz
PBSS5320T,215 Applications
There are a lot of Nexperia USA Inc. PBSS5320T,215 applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver
