PBHV9540Z,115 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 80 @ 300mA 10V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 320mV @ 100mA, 500mA.The base voltage of the emitter can be kept at -6V to achieve high efficiency.Breakdown input voltage is 400V volts.This product comes in a SOT-223 device package from the supplier.This device displays a 400V maximum voltage - Collector Emitter Breakdown.Single BJT transistor is possible to have a collector current as low as 500mA volts at Single BJT transistors maximum.
PBHV9540Z,115 Features
the DC current gain for this device is 80 @ 300mA 10V
the vce saturation(Max) is 320mV @ 100mA, 500mA
the emitter base voltage is kept at -6V
the supplier device package of SOT-223
PBHV9540Z,115 Applications
There are a lot of Nexperia USA Inc. PBHV9540Z,115 applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
