BCP55TF Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 63 @ 150mA 2V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 500mV @ 50mA, 500mA.A 60V maximal voltage - Collector Emitter Breakdown is present in the device.
BCP55TF Features
the DC current gain for this device is 63 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
BCP55TF Applications
There are a lot of Nexperia USA Inc. BCP55TF applications of single BJT transistors.
- Interface
- Inverter
- Muting
- Driver
