Welcome to Hotenda.com Online Store!

logo
userjoin
Home

DPBT8105-7

DPBT8105-7

DPBT8105-7

Diodes Incorporated

DPBT8105-7 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DPBT8105-7 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 19 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Additional FeatureHIGH RELIABILITY
Subcategory Other Transistors
Voltage - Rated DC -60V
Max Power Dissipation300mW
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
Current Rating-1A
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DPBT8105
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation300mW
Power - Max 600mW
Transistor Application SWITCHING
Gain Bandwidth Product150MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 500mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage60V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage-600mV
Max Breakdown Voltage 60V
Collector Base Voltage (VCBO) 80V
Emitter Base Voltage (VEBO) -5V
Height 1mm
Length 3mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:24483 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.143760$0.14376
10$0.135623$1.35623
100$0.127946$12.7946
500$0.120704$60.352
1000$0.113871$113.871

DPBT8105-7 Product Details

DPBT8105-7 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 500mA 5V.A collector emitter saturation voltage of -600mV ensures maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at -5V can result in a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -1A.As a result, the part has a transition frequency of 150MHz.Breakdown input voltage is 60V volts.In extreme cases, the collector current can be as low as 1A volts.

DPBT8105-7 Features


the DC current gain for this device is 100 @ 500mA 5V
a collector emitter saturation voltage of -600mV
the vce saturation(Max) is 600mV @ 100mA, 1A
the emitter base voltage is kept at -5V
the current rating of this device is -1A
a transition frequency of 150MHz

DPBT8105-7 Applications


There are a lot of Diodes Incorporated DPBT8105-7 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

Get Subscriber

Enter Your Email Address, Get the Latest News