Welcome to Hotenda.com Online Store!

logo
userjoin
Home

MJE180G

MJE180G

MJE180G

ON Semiconductor

MJE180G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJE180G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface MountNO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingBulk
Published 2000
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation1.5W
Peak Reflow Temperature (Cel) 260
Current Rating3A
Frequency 50MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MJE180
Pin Count3
Number of Elements 1
Element ConfigurationSingle
Power Dissipation12.5W
Transistor Application SWITCHING
Gain Bandwidth Product50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.7V @ 600mA, 3A
Collector Emitter Breakdown Voltage40V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage1.7V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 7V
hFE Min 50
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:10554 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.711517$0.711517
10$0.671242$6.71242
100$0.633247$63.3247
500$0.597403$298.7015
1000$0.563588$563.588

MJE180G Product Details

MJE180G Overview


In this device, the DC current gain is 50 @ 100mA 1V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The collector emitter saturation voltage is 1.7V, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.7V @ 600mA, 3A.Keeping the emitter base voltage at 7V can result in a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is 3A.As you can see, the part has a transition frequency of 50MHz.During maximum operation, collector current can be as low as 3A volts.

MJE180G Features


the DC current gain for this device is 50 @ 100mA 1V
a collector emitter saturation voltage of 1.7V
the vce saturation(Max) is 1.7V @ 600mA, 3A
the emitter base voltage is kept at 7V
the current rating of this device is 3A
a transition frequency of 50MHz

MJE180G Applications


There are a lot of ON Semiconductor MJE180G applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

Get Subscriber

Enter Your Email Address, Get the Latest News