ZTX458STZ Overview
In this device, the DC current gain is 100 @ 50mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 500mV, it allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 500mV @ 6mA, 50mA.Single BJT transistor is recommended to keep the continuous collector voltage at 300mA in order to achieve high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Its current rating is 300mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.The part has a transition frequency of 50MHz.Collector current can be as low as 300mA volts at its maximum.
ZTX458STZ Features
the DC current gain for this device is 100 @ 50mA 10V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 6mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 300mA
a transition frequency of 50MHz
ZTX458STZ Applications
There are a lot of Diodes Incorporated ZTX458STZ applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
