APT13005TF-G1 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 8 @ 2A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 900mV, which allows maximum flexibilSingle BJT transistory in design.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 900mV @ 1A, 4A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.The product comes in the supplier device package of TO-220-3.Detection of Collector Emitter Breakdown at 450V maximal voltage is present.A maximum collector current of 4A volts is possible.
APT13005TF-G1 Features
the DC current gain for this device is 8 @ 2A 5V
a collector emitter saturation voltage of 900mV
the vce saturation(Max) is 900mV @ 1A, 4A
the emitter base voltage is kept at 9V
the supplier device package of TO-220-3
APT13005TF-G1 Applications
There are a lot of Diodes Incorporated APT13005TF-G1 applications of single BJT transistors.
- Inverter
- Muting
- Driver
- Interface
