APT13003DI-G1 Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 5 @ 1A 2V.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 250mA, 1A.For high efficiency, the continuous collector voltage must be kept at 1.5A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.There is no device package available from the supplier for this product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.The maximum collector current is 1.5A volts.
APT13003DI-G1 Features
the DC current gain for this device is 5 @ 1A 2V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 400mV @ 250mA, 1A
the emitter base voltage is kept at 9V
the supplier device package of TO-251
APT13003DI-G1 Applications
There are a lot of Diodes Incorporated APT13003DI-G1 applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
