Welcome to Hotenda.com Online Store!

logo
userjoin
Home

PBSS306NZ,135

PBSS306NZ,135

PBSS306NZ,135

Nexperia USA Inc.

PBSS306NZ,135 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website

SOT-23

PBSS306NZ,135 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 4 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-261-4, TO-261AA
Number of Pins 4
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2009
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Termination SMD/SMT
ECCN Code EAR99
Terminal Finish Tin (Sn)
Max Power Dissipation2W
Terminal Position DUAL
Terminal FormGULL WING
Frequency 110MHz
Base Part Number PBSS306N
Pin Count4
Number of Elements 1
Element ConfigurationSingle
Power Dissipation700mW
Case Connection COLLECTOR
Power - Max 2W
Transistor Application SWITCHING
Gain Bandwidth Product110MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 5.1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 255mA, 5.1A
Collector Emitter Breakdown Voltage100V
Transition Frequency 110MHz
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 200
Height 6.35mm
Length 6.35mm
Width 6.35mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:9495 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$2.182980$2.18298
10$2.059415$20.59415
100$1.942844$194.2844
500$1.832872$916.436
1000$1.729124$1729.124

PBSS306NZ,135 Product Details

PBSS306NZ,135 Overview


DC current gain in this device equals 100 @ 2A 2V, which is the ratio of the base current to the collector current.When VCE saturation is 300mV @ 255mA, 5.1A, transistor means Ic has reached transistors maximum value (saturated).With the emitter base voltage set at 5V, an efficient operation can be achieved.110MHz is present in the transition frequency.An input voltage of 100V volts is the breakdown voltage.The maximum collector current is 5.1A volts.

PBSS306NZ,135 Features


the DC current gain for this device is 100 @ 2A 2V
the vce saturation(Max) is 300mV @ 255mA, 5.1A
the emitter base voltage is kept at 5V
a transition frequency of 110MHz

PBSS306NZ,135 Applications


There are a lot of Nexperia USA Inc. PBSS306NZ,135 applications of single BJT transistors.

  • Interface
  • Muting
  • Inverter
  • Driver

Get Subscriber

Enter Your Email Address, Get the Latest News