BC817K40E6433HTMA1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 250 @ 100mA 1V.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 700mV @ 50mA, 500mA.Keeping the emitter base voltage at 5V can result in a high level of efficiency.The part has a transition frequency of 170MHz.There is a breakdown input voltage of 45V volts that it can take.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
BC817K40E6433HTMA1 Features
the DC current gain for this device is 250 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 170MHz
BC817K40E6433HTMA1 Applications
There are a lot of Infineon Technologies BC817K40E6433HTMA1 applications of single BJT transistors.
- Interface
- Muting
- Driver
- Inverter
