2SC6082-EPN-1E Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 200 @ 330mA 2V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 400mV @ 375mA, 7.5A.A maximum collector current of 15A volts is possible.
2SC6082-EPN-1E Features
the DC current gain for this device is 200 @ 330mA 2V
the vce saturation(Max) is 400mV @ 375mA, 7.5A
2SC6082-EPN-1E Applications
There are a lot of ON Semiconductor 2SC6082-EPN-1E applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
