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2SD2696T2L

2SD2696T2L

2SD2696T2L

ROHM Semiconductor

2SD2696T2L datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

2SD2696T2L Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 10 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-723
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingCut Tape (CT)
Published 2015
JESD-609 Code e2
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN COPPER
Subcategory Other Transistors
Max Power Dissipation150mW
Terminal Position DUAL
Terminal FormFLAT
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 10
Pin Count3
JESD-30 Code R-PDSO-F3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 150mW
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 300mV
Max Collector Current 400mA
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 2mA, 100mA
Collector Emitter Breakdown Voltage30V
Transition Frequency 400MHz
Max Breakdown Voltage 30V
Frequency - Transition 400MHz
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:15375 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.247236$1.247236
10$1.176638$11.76638
100$1.110036$111.0036
500$1.047204$523.602
1000$0.987928$987.928

2SD2696T2L Product Details

2SD2696T2L Overview


In this device, the DC current gain is 270 @ 100mA 2V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.A VCE saturation (Max) of 300mV @ 2mA, 100mA means Ic has reached its maximum value(saturated).The part has a transition frequency of 400MHz.This device can take an input voltage of 30V volts before it breaks down.Collector current can be as low as 400mA volts at its maximum.

2SD2696T2L Features


the DC current gain for this device is 270 @ 100mA 2V
the vce saturation(Max) is 300mV @ 2mA, 100mA
a transition frequency of 400MHz

2SD2696T2L Applications


There are a lot of ROHM Semiconductor 2SD2696T2L applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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