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PHE13003A,126

PHE13003A,126

PHE13003A,126

WeEn Semiconductors

PHE13003A,126 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

PHE13003A,126 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Operating Temperature150°C TJ
PackagingTape & Box (TB)
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Power - Max 2.1W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 400mA 5V
Current - Collector Cutoff (Max) 1mA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 250mA, 750mA
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 1A
RoHS StatusRoHS Compliant
In-Stock:1864 items

Pricing & Ordering

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PHE13003A,126 Product Details

PHE13003A,126 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 400mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 250mA, 750mA.The device has a 400V maximal voltage - Collector Emitter Breakdown.

PHE13003A,126 Features


the DC current gain for this device is 10 @ 400mA 5V
the vce saturation(Max) is 1.5V @ 250mA, 750mA

PHE13003A,126 Applications


There are a lot of WeEn Semiconductors PHE13003A,126 applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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