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BC 807-25W H6327

BC 807-25W H6327

BC 807-25W H6327

Infineon Technologies

BC 807-25W H6327 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BC 807-25W H6327 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Surface MountYES
Transistor Element Material SILICON
Operating Temperature150°C TJ
PackagingTape & Reel (TR)
Published 2007
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Position DUAL
Terminal FormGULL WING
Reach Compliance Code compliant
Base Part Number BC807
JESD-30 Code R-PDSO-G3
Number of Elements 1
Configuration SINGLE
Power - Max 250mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 160 @ 100mA 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 700mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 45V
Current - Collector (Ic) (Max) 500mA
Transition Frequency 200MHz
Frequency - Transition 200MHz
In-Stock:4654 items

BC 807-25W H6327 Product Details

BC 807-25W H6327 Overview


This device has a DC current gain of 160 @ 100mA 1V, which is the ratio between the collector current and the base current.When VCE saturation is 700mV @ 50mA, 500mA, transistor means Ic has reached transistors maximum value (saturated).As you can see, the part has a transition frequency of 200MHz.Device displays Collector Emitter Breakdown (45V maximal voltage).

BC 807-25W H6327 Features


the DC current gain for this device is 160 @ 100mA 1V
the vce saturation(Max) is 700mV @ 50mA, 500mA
a transition frequency of 200MHz

BC 807-25W H6327 Applications


There are a lot of Infineon Technologies BC 807-25W H6327 applications of single BJT transistors.

  • Driver
  • Inverter
  • Interface
  • Muting

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