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BD745A-S

BD745A-S

BD745A-S

Bourns Inc.

BD745A-S datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Bourns Inc. stock available on our website

SOT-23

BD745A-S Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-218-3
Number of Pins 3
Supplier Device Package SOT-93
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 1993
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation3.5W
Base Part Number BD745
Polarity NPN
Power - Max 3.5W
Transistor Type NPN
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 20A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 5A 4V
Current - Collector Cutoff (Max) 1μA
Vce Saturation (Max) @ Ib, Ic 3V @ 5A, 20A
Collector Emitter Breakdown Voltage60V
Voltage - Collector Emitter Breakdown (Max) 60V
Current - Collector (Ic) (Max) 20A
RoHS StatusROHS3 Compliant
In-Stock:3854 items

BD745A-S Product Details

BD745A-S Overview


DC current gain in this device equals 20 @ 5A 4V, which is the ratio of the base current to the collector current.A VCE saturation (Max) of 3V @ 5A, 20A means Ic has reached its maximum value(saturated).Product comes in SOT-93 supplier package.Device displays Collector Emitter Breakdown (60V maximal voltage).When collector current reaches its maximum, it can reach 20A volts.

BD745A-S Features


the DC current gain for this device is 20 @ 5A 4V
the vce saturation(Max) is 3V @ 5A, 20A
the supplier device package of SOT-93

BD745A-S Applications


There are a lot of Bourns Inc. BD745A-S applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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