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PN4143

PN4143

PN4143

ON Semiconductor

PN4143 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

PN4143 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingBulk
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Subcategory Other Transistors
Terminal Position BOTTOM
Terminal FormWIRE
Reach Compliance Code unknown
JESD-30 Code O-PBCY-W3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 10V
Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 40V
Current - Collector (Ic) (Max) 800mA
Transition Frequency 200MHz
Power Dissipation-Max (Abs) 0.625W
Collector-Base Capacitance-Max 8pF
In-Stock:4986 items

PN4143 Product Details

PN4143 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 10V DC current gain.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.6V @ 50mA, 500mA.As you can see, the part has a transition frequency of 200MHz.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.

PN4143 Features


the DC current gain for this device is 100 @ 150mA 10V
the vce saturation(Max) is 1.6V @ 50mA, 500mA
a transition frequency of 200MHz

PN4143 Applications


There are a lot of ON Semiconductor PN4143 applications of single BJT transistors.

  • Interface
  • Driver
  • Muting
  • Inverter

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