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SUM110P06-07L-E3

SUM110P06-07L-E3

SUM110P06-07L-E3

Vishay Siliconix

SUM110P06-07L-E3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available on our website

SOT-23

SUM110P06-07L-E3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins 3
Weight 1.946308g
Transistor Element Material SILICON
Operating Temperature-55°C~175°C TJ
PackagingCut Tape (CT)
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 6.9MOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Pin Count4
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 3.75W Ta 375W Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation3.75W
Turn On Delay Time20 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 6.9m Ω @ 30A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11400pF @ 25V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 345nC @ 10V
Rise Time160ns
Drain to Source Voltage (Vdss) 60V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 240 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) -11A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage -60V
Pulsed Drain Current-Max (IDM) 240A
Max Junction Temperature (Tj) 175°C
Nominal Vgs -3 V
Height 5.08mm
Length 10.41mm
Width 9.65mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:2011 items

Pricing & Ordering

QuantityUnit PriceExt. Price
800$1.97750$1582

SUM110P06-07L-E3 Product Details

SUM110P06-07L-E3 Description


IRFR3708TRPBF developed by Vishay Siliconix is a type of MOSFET which is a field-effect transistor that uses the effect of electric field to control the semiconductor (S) through the gate of the metal layer (M) through the oxide layer (O). Its characteristic is to use the gate voltage to control the drain current. Its input terminal is connected to a high level or a low level (usually a high level), and a voltage drop Vce will be generated when the current Ib flows through the MOSFET. The size of this voltage drop is determined by the forward conduction angle of the P-type and N-type diodes. size to decide.



SUM110P06-07L-E3 Features


Fast switching speed

Ultra-low gate impedance

Low power consumption

Strong driving ability

Full characterized avalanche voltage and current



SUM110P06-07L-E3 Applications


Analog circuits

Digital circuits


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