Name: STW15NK90Z
Brand: STMicroelectronics
SKU: STW15NK90Z
Price: 9.48000 USD
Availability: InStock

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STW15NK90Z

Manufacturer part number:STW15NK90Z

Manufacturer:STMicroelectronics

Description:STW15NK90Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STW15NK90Z Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	4.535924g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	SuperMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	400mOhm
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	AVALANCHE RATED, HIGH VOLTAGE
Subcategory	FET General Purpose Power
Voltage - Rated DC	1kV
Technology	MOSFET (Metal Oxide)
Current Rating	13A
Base Part Number	STW15N
Pin Count	3
Number of Elements	1
Power Dissipation-Max	350W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	350W
Turn On Delay Time	42 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	550m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	6100pF @ 25V
Current - Continuous Drain (Id) @ 25°C	15A Tc
Gate Charge (Qg) (Max) @ Vgs	256nC @ 10V
Rise Time	27ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	35 ns
Turn-Off Delay Time	135 ns
Continuous Drain Current (ID)	7.5A
Threshold Voltage	3.75V
JEDEC-95 Code	TO-247AC
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	900V
Pulsed Drain Current-Max (IDM)	60A
Height	20.15mm
Length	15.75mm
Width	5.15mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

STW15NK90Z Product Details

STW15NK90Z Description

The well-known strip-based Power MESHTM layout of ST is greatly optimized to produce the Super MESHTM series. In addition to drastically reducing on-resistance, extra effort is taken to guarantee excellent dv/dt capability for the most demanding applications. Such a series completes ST's line of high voltage MOSFETs, which includes the ground-breaking MDmeshTM devices.