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IXTP64N10L2

IXTP64N10L2

IXTP64N10L2

IXYS

DISC MOSFET N-CH LINEAR L2 TO-22

SOT-23

IXTP64N10L2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 24 Weeks
Mounting Type Through Hole
Package / Case TO-220-3
Operating Temperature-55°C~150°C TJ
Part StatusActive
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 357W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 32m Ω @ 32A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3620pF @ 25V
Current - Continuous Drain (Id) @ 25°C 64A Tc
Gate Charge (Qg) (Max) @ Vgs 100nC @ 10V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
RoHS StatusRoHS Compliant
In-Stock:507 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$18.21000$18.21
500$18.0279$9013.95
1000$17.8458$17845.8
1500$17.6637$26495.55
2000$17.4816$34963.2
2500$17.2995$43248.75

About IXTP64N10L2

The IXTP64N10L2 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features DISC MOSFET N-CH LINEAR L2 TO-22.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXTP64N10L2, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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