Name: SIR616DP-T1-GE3
Brand: Vishay Siliconix
SKU: SIR616DP-T1-GE3
Price: 1.55000 USD
Availability: InStock

new-10%

SIR616DP-T1-GE3

Manufacturer part number:SIR616DP-T1-GE3

Manufacturer:Vishay Siliconix

Description:MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 50.5m Ω @ 10A, 10V ±20V 1450pF @ 100V 28nC @ 7.5V 200V PowerPAK® SO-8

Case Package:SOT-23

Datasheet:SIR616DP-T1-GE3 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	PowerPAK® SO-8
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	ThunderFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED
Power Dissipation-Max	52W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	50.5m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1450pF @ 100V
Current - Continuous Drain (Id) @ 25°C	20.2A Tc
Gate Charge (Qg) (Max) @ Vgs	28nC @ 7.5V
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	7.5V 10V
Vgs (Max)	±20V
RoHS Status	ROHS3 Compliant

SIR616DP-T1-GE3 Product Details

SIR616DP-T1-GE3 Overview

CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1450pF @ 100V.The transistor must receive a 200V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (7.5V 10V).