NTK3134NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website
SOT-23
NTK3134NT1G Datasheet PDF
non-compliant
Technical Specifications
Parameter Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 22 hours ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
SOT-723
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
200mOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
[email protected] Reflow Temperature-Max (s)
40
Pin Count
3
Number of Elements
1
Power Dissipation-Max
310mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
310mW
Turn On Delay Time
6.7 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
350m Ω @ 890mA, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
120pF @ 16V
Current - Continuous Drain (Id) @ 25°C
750mA Ta
Rise Time
4.8ns
Drive Voltage (Max Rds On,Min Rds On)
1.5V 4.5V
Vgs (Max)
±6V
Fall Time (Typ)
4.8 ns
Turn-Off Delay Time
17.3 ns
Continuous Drain Current (ID)
890mA
Threshold Voltage
1.2V
Gate to Source Voltage (Vgs)
6V
Drain Current-Max (Abs) (ID)
0.89A
Drain to Source Breakdown Voltage
20V
Height
550μm
Length
1.25mm
Width
850μm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
In-Stock:17946 items
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.48000
$0.48
500
$0.4752
$237.6
1000
$0.4704
$470.4
1500
$0.4656
$698.4
2000
$0.4608
$921.6
2500
$0.456
$1140
NTK3134NT1G Product Details
NTK3134NT1G Description
The NTK3134NT1G is a 20 V, 890 mA, Single N?Channel with ESD Protection, SOT?723. The type of the NTK3134NT1G, N-Channel MOSFETs, are metal-oxide-semiconductor field-effect transistors that fall under the field-effect transistors category (FET). The capacitor is used to power MOSFET transistors. An insulated-gate field-effect transistor is another name for this type of transistor (IGFET).
NTK3134NT1G Features
? Low RDS N-Channel Switch (on)
? SC89 footprint is 44% smaller and 38% thinner.
? RDS(on) Rating of 1.5 V at Low Threshold Levels
? Low Logic Level Gate Drive operation
? These devices are RoHS compliant and free of Pb, Halogen, and BFR
NTK3134NT1G Applications
? Logic Level Shift
? Load Switching
? Power Switching
? Interface Switching
? Battery Management for Ultra Small Portable Electronics
Related Products
Similar Transistors - FETs, MOSFETs - Single from ON Semiconductor and other manufacturers
