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IXFA12N65X2

IXFA12N65X2

IXFA12N65X2

IXYS

MOSFET N-CH

SOT-23

IXFA12N65X2 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 19 Weeks
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature-55°C~150°C TJ
Series HiPerFET™
Part StatusActive
Technology MOSFET (Metal Oxide)
Reach Compliance Code compliant
Power Dissipation-Max 180W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 310m Ω @ 6A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1134pF @ 25V
Current - Continuous Drain (Id) @ 25°C 12A Tc
Gate Charge (Qg) (Max) @ Vgs 18.5nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:1961 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$4.344559$4.344559
10$4.098641$40.98641
100$3.866642$386.6642
500$3.647776$1823.888
1000$3.441298$3441.298

About IXFA12N65X2

The IXFA12N65X2 from IXYS is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the IXFA12N65X2, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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