Name: FCPF290N80
Brand: ON Semiconductor
SKU: FCPF290N80
Price: 5.03000 USD
Availability: InStock

new-10%

FCPF290N80

Manufacturer part number:FCPF290N80

Manufacturer:ON Semiconductor

Description:FCPF290N80 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FCPF290N80 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Weight	2.27g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Power Dissipation-Max	40W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	ISOLATED
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	290m Ω @ 8.5A, 10V
Vgs(th) (Max) @ Id	4.5V @ 1.7mA
Input Capacitance (Ciss) (Max) @ Vds	3205pF @ 100V
Current - Continuous Drain (Id) @ 25°C	17A Tc
Gate Charge (Qg) (Max) @ Vgs	75nC @ 10V
Drain to Source Voltage (Vdss)	800V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	17A
JEDEC-95 Code	TO-220AB
Drain-source On Resistance-Max	0.29Ohm
Pulsed Drain Current-Max (IDM)	42A
DS Breakdown Voltage-Min	800V
Avalanche Energy Rating (Eas)	882 mJ
RoHS Status	ROHS3 Compliant

FCPF290N80 Product Details

FCPF290N80 Description

FCPF290N80 is a type of N-channel SUPERFET II MOSFET that belongs to the brand?new high voltage super?junction (SJ) MOSFET family provided by ON Semiconductor. Based on the charge balance technology, it is able to provide outstanding low on?resistance and lower gate charge performance, minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rates.