Welcome to Hotenda.com Online Store!

logo
userjoin
Home

SI2314EDS-T1-E3

SI2314EDS-T1-E3

SI2314EDS-T1-E3

Vishay Siliconix

MOSFET N-CH 20V 3.77A SOT23-3

SOT-23

SI2314EDS-T1-E3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 1.437803g
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2016
Series TrenchFET®
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 33mOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Pin Count3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 750mW Ta
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation750mW
Turn On Delay Time530 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 33m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.77A Ta
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Rise Time1.4μs
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±12V
Fall Time (Typ) 1.4 μs
Turn-Off Delay Time 13.5 μs
Continuous Drain Current (ID) 4.9A
Threshold Voltage 950mV
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 20V
Nominal Vgs 950 mV
Height 1.02mm
Length 3.04mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:8497 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.071373$0.071373
500$0.052480$26.24
1000$0.043733$43.733
2000$0.040122$80.244
5000$0.037497$187.485
10000$0.034881$348.81
15000$0.033734$506.01
50000$0.033171$1658.55

About SI2314EDS-T1-E3

The SI2314EDS-T1-E3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 20V 3.77A SOT23-3.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI2314EDS-T1-E3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

Get Subscriber

Enter Your Email Address, Get the Latest News