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NTA4153NT1G

NTA4153NT1G

NTA4153NT1G

ON Semiconductor

NTA4153NT1G datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

SOT-23

NTA4153NT1G Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 5 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mounting Type Surface Mount
Package / Case SC-75, SOT-416
Surface MountYES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 127mOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Voltage - Rated DC 20V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Current Rating915mA
Pin Count3
Number of Elements 1
Power Dissipation-Max 300mW Tj
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation300mW
Turn On Delay Time3.7 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 230m Ω @ 600mA, 4.5V
Vgs(th) (Max) @ Id 1.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 110pF @ 16V
Current - Continuous Drain (Id) @ 25°C 915mA Ta
Gate Charge (Qg) (Max) @ Vgs 1.82nC @ 4.5V
Rise Time4.4ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±6V
Fall Time (Typ) 4.4 ns
Turn-Off Delay Time 25 ns
Continuous Drain Current (ID) 915mA
Threshold Voltage 760mV
Gate to Source Voltage (Vgs) 6V
Drain to Source Breakdown Voltage 20V
Nominal Vgs 760 mV
Height 800μm
Length 800μm
Width 1.6mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:17993 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.43000$0.43
500$0.4257$212.85
1000$0.4214$421.4
1500$0.4171$625.65
2000$0.4128$825.6
2500$0.4085$1021.25

NTA4153NT1G Product Details

NTA4153NT1G Description

The NTA4153NT1G is an ESD-protected N-channel Small Signal MOSFET. It can be used in load/power switches, power supply converter circuits, battery management, and portable devices such as cell phones, PDAs, digital cameras, and pagers.

NTA4153NT1G Features

Low RDS(on) Improving System Efficiency
Low Threshold Voltage, 1.5 V Rated
ESD Protected Gate
Pb?Free Packages are Available
NV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements; AEC?Q101 Qualified and PPAP Capable


NTA4153NT1G Applications

Load/Power Switches
Battery Management
Power Supply Converter Circuits
Portables like Cell Phones, PDAs, Digital Cameras, Pagers, etc.

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