Name: BSZ060NE2LSATMA1
Brand: Infineon Technologies
SKU: BSZ060NE2LSATMA1
Price: 0.95000 USD
Availability: InStock

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BSZ060NE2LSATMA1

Manufacturer part number:BSZ060NE2LSATMA1

Manufacturer:Infineon Technologies

Description:BSZ060NE2LSATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

Case Package:SOT-23

Datasheet:BSZ060NE2LSATMA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	18 Weeks
Contact Plating	Tin
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	OptiMOS™
JESD-609 Code	e3
Pbfree Code	no
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	8
JESD-30 Code	S-PDSO-N3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2.1W Ta 26W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.1W
Case Connection	DRAIN
Turn On Delay Time	2.5 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	6m Ω @ 20A, 10V
Vgs(th) (Max) @ Id	2V @ 250μA
Halogen Free	Halogen Free
Input Capacitance (Ciss) (Max) @ Vds	670pF @ 12V
Current - Continuous Drain (Id) @ 25°C	12A Ta 40A Tc
Gate Charge (Qg) (Max) @ Vgs	9.1nC @ 10V
Rise Time	2.2ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	1.8 ns
Turn-Off Delay Time	11 ns
Continuous Drain Current (ID)	12A
Threshold Voltage	2V
Gate to Source Voltage (Vgs)	20V
Max Dual Supply Voltage	25V
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Contains Lead

BSZ060NE2LSATMA1 Product Details

BSZ060NE2LSATMA1 Description

With this Infineon Technologies BSZ060NE2LSATMA1 power MOSFET, you can boost the current or voltage in your circuit. It can dissipate up to 2100 mW of power. This product will be sent in tape and reel packaging to allow for optimal component mounting. In enhancement mode, this N channel MOSFET transistor works. Optimos technology is used in this device. The operating temperature range for this MOSFET transistor is -55 °C to 150 °C.