Name: IRFSL3306PBF
Brand: Infineon Technologies
SKU: IRFSL3306PBF
Price: 3.02000 USD
Availability: InStock

new-10%

IRFSL3306PBF

Manufacturer part number:IRFSL3306PBF

Manufacturer:Infineon Technologies

Description:N-Channel Tube 4.2m Ω @ 75A, 10V ±20V 4520pF @ 50V 120nC @ 10V TO-262-3 Long Leads, I2Pak, TO-262AA

Case Package:SOT-23

Datasheet:IRFSL3306PBF Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-262-3 Long Leads, I2Pak, TO-262AA
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Series	HEXFET®
Published	2007
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - with Nickel (Ni) barrier
Voltage - Rated DC	60V
Peak Reflow Temperature (Cel)	260
Current Rating	160A
Time@Peak Reflow Temperature-Max (s)	40
Number of Elements	1
Power Dissipation-Max	230W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	230W
Case Connection	DRAIN
Turn On Delay Time	15 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	4.2m Ω @ 75A, 10V
Vgs(th) (Max) @ Id	4V @ 150μA
Input Capacitance (Ciss) (Max) @ Vds	4520pF @ 50V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	120nC @ 10V
Rise Time	76ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	77 ns
Turn-Off Delay Time	40 ns
Continuous Drain Current (ID)	120A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.0042Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	620A
Height	9.65mm
Length	10.668mm
Width	4.826mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

IRFSL3306PBF Product Details

Description

The IRFSL3306PBF is an enhanced gate, avalanche, and dynamic dV/dt robust HEXFET? single N-channel Power MOSFET. In SMPS, hard switched, and high-frequency circuits, it is appropriate for synchronous rectification with high efficiency. Metal oxide semiconductor field-effect transistors, or power MOSFETs, are used to switch enormous amounts of current. The most popular power devices are power MOSFETs because of their outstanding paralleling capabilities, quick switching speed, and low gate drive power.