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SI2303BDS-T1-E3

SI2303BDS-T1-E3

SI2303BDS-T1-E3

Vishay Siliconix

Trans MOSFET P-CH 30V 1.3A 3-Pin SOT-23 T/R

SOT-23

SI2303BDS-T1-E3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 200mOhm
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Peak Reflow Temperature (Cel) 260
[email protected] Reflow Temperature-Max (s) 30
Pin Count3
Number of Elements 1
Voltage 30V
Max Supply Voltage36V
Min Supply Voltage13V
Power Dissipation-Max 700mW Ta
Element ConfigurationSingle
Current 164A
Operating ModeENHANCEMENT MODE
Power Dissipation900mW
Turn On Delay Time55 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 200m Ω @ 1.7A, 10V
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 180pF @ 15V
Current - Continuous Drain (Id) @ 25°C 1.49A Ta
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
Rise Time40ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 40 ns
Turn-Off Delay Time 10 ns
Continuous Drain Current (ID) 1.3A
Threshold Voltage -3V
Gate to Source Voltage (Vgs) 20V
Max Dual Supply Voltage22V
Min Dual Supply Voltage 7V
Drain to Source Breakdown Voltage 30V
Nominal Vgs -3 V
Height 1.02mm
Length 3.04mm
Width 1.4mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:1323 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.059190$0.05919
500$0.043522$21.761
1000$0.036268$36.268
2000$0.033273$66.546
5000$0.031097$155.485
10000$0.028927$289.27
15000$0.027976$419.64
50000$0.027508$1375.4

About SI2303BDS-T1-E3

The SI2303BDS-T1-E3 from Vishay Siliconix is a high-performance microcontroller designed for a wide range of embedded applications. This component features Trans MOSFET P-CH 30V 1.3A 3-Pin SOT-23 T/R.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the SI2303BDS-T1-E3, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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