Name: IPB80N04S403JEATMA1
Brand: Infineon Technologies
SKU: IPB80N04S403JEATMA1
Availability: InStock

new-10%

IPB80N04S403JEATMA1

Manufacturer part number:IPB80N04S403JEATMA1

Manufacturer:Infineon Technologies

Description:MOSFET (Metal Oxide) N-Channel 3.7m Ω @ 80A, 10V ±20V 5260pF @ 25V 66nC @ 10V 40V TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Case Package:SOT-23

Datasheet:IPB80N04S403JEATMA1 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature	-55°C~155°C TJ
Series	OptiMOS®-T2
Part Status	Obsolete
Technology	MOSFET (Metal Oxide)
Reach Compliance Code	compliant
Power Dissipation-Max	94W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.7m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 53μA
Input Capacitance (Ciss) (Max) @ Vds	5260pF @ 25V
Current - Continuous Drain (Id) @ 25°C	80A Tc
Gate Charge (Qg) (Max) @ Vgs	66nC @ 10V
Drain to Source Voltage (Vdss)	40V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V

IPB80N04S403JEATMA1 Product Details

IPB80N04S403JEATMA1 Overview

Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 5260pF @ 25V.In order to operate this transistor, a voltage of 40V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (10V).