PHX27NQ11T,127 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 90 mJ.The maximum input capacitance of this device is 1240pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 20.8A.There is no pulsed drain current maximum for this device based on its rated peak drain current 83.4A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 110V.The drain-to-source voltage (Vdss) of this transistor needs to be at 110V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
PHX27NQ11T,127 Features
the avalanche energy rating (Eas) is 90 mJ
based on its rated peak drain current 83.4A.
a 110V drain to source voltage (Vdss)
PHX27NQ11T,127 Applications
There are a lot of NXP USA Inc.
PHX27NQ11T,127 applications of single MOSFETs transistors.
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,