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PHX27NQ11T,127

PHX27NQ11T,127

PHX27NQ11T,127

NXP USA Inc.

MOSFET (Metal Oxide) N-Channel Tube 50m Ω @ 14A, 10V ±20V 1240pF @ 25V 30nC @ 10V 110V TO-220-3 Full Pack, Isolated Tab

SOT-23

PHX27NQ11T,127 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Surface MountNO
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTube
Series TrenchMOS™
Published 1997
JESD-609 Code e3
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count3
JESD-30 Code R-PSFM-T3
Qualification StatusNot Qualified
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 50W Tc
Operating ModeENHANCEMENT MODE
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 50m Ω @ 14A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 1240pF @ 25V
Current - Continuous Drain (Id) @ 25°C 20.8A Tc
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Drain to Source Voltage (Vdss) 110V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-220AB
Drain Current-Max (Abs) (ID) 20.8A
Drain-source On Resistance-Max 0.05Ohm
Pulsed Drain Current-Max (IDM) 83.4A
DS Breakdown Voltage-Min 110V
Avalanche Energy Rating (Eas) 90 mJ
RoHS StatusROHS3 Compliant
In-Stock:2041 items

PHX27NQ11T,127 Product Details

PHX27NQ11T,127 Overview


This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 90 mJ.The maximum input capacitance of this device is 1240pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 20.8A.There is no pulsed drain current maximum for this device based on its rated peak drain current 83.4A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 110V.The drain-to-source voltage (Vdss) of this transistor needs to be at 110V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.

PHX27NQ11T,127 Features


the avalanche energy rating (Eas) is 90 mJ
based on its rated peak drain current 83.4A.
a 110V drain to source voltage (Vdss)


PHX27NQ11T,127 Applications


There are a lot of NXP USA Inc.
PHX27NQ11T,127 applications of single MOSFETs transistors.


  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

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