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SI1317DL-T1-GE3

SI1317DL-T1-GE3

SI1317DL-T1-GE3

Vishay Siliconix

SI1317DL-T1-GE3 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Vishay Siliconix stock available on our website

SOT-23

SI1317DL-T1-GE3 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 14 Weeks
Contact PlatingTin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Number of Pins 3
Weight 124.596154mg
Transistor Element Material SILICON
Operating Temperature-50°C~150°C TJ
PackagingTape & Reel (TR)
Published 2012
Series TrenchFET®
JESD-609 Code e3
Part StatusActive
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal FormGULL WING
Pin Count3
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 500mW Tc
Element ConfigurationSingle
Operating ModeENHANCEMENT MODE
Power Dissipation400mW
Turn On Delay Time12 ns
FET Type P-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 150m Ω @ 1.4A, 4.5V
Vgs(th) (Max) @ Id 800mV @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 272pF @ 10V
Current - Continuous Drain (Id) @ 25°C 1.4A Tc
Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 4.5V
Rise Time30ns
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 18 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) -1.4A
Threshold Voltage -800mV
Gate to Source Voltage (Vgs) 8V
Drain to Source Breakdown Voltage -20V
Max Junction Temperature (Tj) 150°C
Height 1.1mm
Radiation HardeningNo
REACH SVHC No SVHC
RoHS StatusROHS3 Compliant
Lead Free Lead Free
In-Stock:18615 items

Pricing & Ordering

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SI1317DL-T1-GE3 Product Details

SI1317DL-T1-GE3 Description


MOSFET (P-Channel, 20 V, D-S)



SI1317DL-T1-GE3 Features


  • Power MOSFET TrenchFET

  • Rg tested in full



SI1317DL-T1-GE3 Applications


  • loading switch

  • Converters DC/DC


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