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FQU2N80TU

FQU2N80TU

FQU2N80TU

ON Semiconductor

MOSFET N-CH 800V 1.8A IPAK

SOT-23

FQU2N80TU Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Supplier Device Package I-PAK
Operating Temperature-55°C~150°C TJ
PackagingTube
Published 2000
Series QFET®
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 2.5W Ta 50W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 6.3Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 550pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1.8A Tc
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Drain to Source Voltage (Vdss) 800V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
In-Stock:10606 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$3.510034$3.510034
10$3.311353$33.11353
100$3.123917$312.3917
500$2.947092$1473.546
1000$2.780275$2780.275

About FQU2N80TU

The FQU2N80TU from ON Semiconductor is a high-performance microcontroller designed for a wide range of embedded applications. This component features MOSFET N-CH 800V 1.8A IPAK.

Key Features

  • Advanced AVR architecture for efficient processing
  • Wide operating temperature range: -40°C to 85°C
  • Low power consumption for energy-efficient applications
  • Comprehensive peripheral set including SPI, UART, and USART interfaces

Applications

This microcontroller is ideal for various applications including:

  • Industrial control systems
  • Consumer electronics
  • Automotive systems
  • IoT devices
  • Medical equipment

Technical Support

Hotenda provides comprehensive technical support for the FQU2N80TU, including datasheets, application notes, and design resources. Our team of engineers is available to assist with your design challenges.

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