Description
The FDB1D7N10CL7 is an N-Channel Shielded Gate POWERTRENCH? MOSFET, 100 V, 268 A, 1.7 mΩ. This N-Channel MOSFET is made utilizing the cutting-edge POWERTRENCH process from ON Semiconductor, which combines Shielded Gate technology. With the best-in-class soft body diode, this method has been refined to reduce on-state resistance while maintaining exceptional switching performance.
Features
50% Lower Qrr than Other MOSFET Suppliers
Lowers Switching Noise/EMI
MSL1 Robust Package Design
100% UIL Tested
Max RDS(on) = 1.75 mΩ at VGS = 10 V, ID = 100 A
Max RDS(on) = 1.7 mΩ at VGS = 12 V, ID = 100 A
Max RDS(on) = 1.65 mΩ at VGS = 15 V, ID = 100 A
Max RDS(on) = 4.4 mΩ at VGS = 6 V, ID = 63 A
Applications
Battery Operated Tools
Battery Protection
Solar Inverters
UPS and Energy Inverters
Energy Storage
Load Switch
Industrial Motor Drive
Industrial Power Supply
Industrial Automation
