Name: FDH3632
Brand: ON Semiconductor
SKU: FDH3632
Price: 5.57000 USD
Availability: InStock

new-10%

FDH3632

Manufacturer part number:FDH3632

Manufacturer:ON Semiconductor

Description:FDH3632 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FDH3632 Datasheet PDF

RoHs Status:non-compliant

Parameter Name	Value
Type	Parameter
Factory Lead Time	10 Weeks
Lifecycle Status	ACTIVE (Last Updated: 3 days ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Weight	6.39g
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	2013
Series	PowerTrench®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	9MOhm
Terminal Finish	Tin (Sn)
Subcategory	FET General Purpose Power
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	80A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	310W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	310W
Case Connection	DRAIN
Turn On Delay Time	30 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	6000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	12A Ta 80A Tc
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Rise Time	39ns
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	46 ns
Turn-Off Delay Time	96 ns
Continuous Drain Current (ID)	80A
Threshold Voltage	4V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	100V
Nominal Vgs	4 V
Height	6.35mm
Length	6.35mm
Width	6.35mm
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free

FDH3632 Product Details

FDH3632 Description

FDH3632 MOSFET is based on established silicon processes that provide designers with an extensive range of devices. FDH3632 datasheet is available in a range of through-hole and surface-mount packaging with standard footprints to facilitate designing. ON Semiconductor FDH3632 is used in High-Frequency Synchronous Buck, Converters for Computer Processor Power, High-Frequency Isolated DC-DC, Converters with Synchronous Rectification, Telecom and Industrial Use.